TRANSISTOR J48 NTE 2998 ELECTRONICS PARTS

Description

TRANSISTOR
J48 ( NTE2998 )
G
NTE2998
MOSFET
P−Channel, Enhancement Mode
High Speed Switch
Features:
High Speed Switching
High Voltage
High Energy Rating
Enhancement Mode
Integral Protection Diode
Absolute Maximum Ratings:
(T
C
= +25
?
C unless otherwise specified)
Drain−Source Voltage, V
DSX
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Gate−Source Voltage, V
GSS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
?
14V
Continuous Drain Current, I
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Body Drain Diode, I
D(PK)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Total Power Dissipation (T
C
= +25
?
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Maximum Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150
?
C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55
?
to +150
?
C
Thermal Resistance, Junction−to−Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0
?
C/W
Electrical Characteristics:
(T
C
= +25
?
C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Static Characteristics
Drain−Source Breakdown Voltage BV
DSX
V
GS
= 10V, I
D
= 10mA 200 − − V
Gate−Source Breakdown Voltage BV
GSS
V
DS
= 0, I
G
=
?
100
μ
A
?
14 − − V
Gate−Source Cut−Off Voltage V
GS(OFF)
V
DS
= 10V, I
D
= 100mA 0.15 − 1.5 V
Drain−Source Saturation Voltage V
DS(SAT)
V
GD
= 0, I
D
= 8A, Note 1 − − 12 V
Drain−Source Cut−Off Current I
DSX
V
GS
= 10V, V
DS
= 200V − − 10 mA
Forward Transfer Admittance y
fs
V
DS
= 10V, I
D
= 3A, Note 1 0.7 − 2.0 S
Note 1. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2%.
Electrical Characteristics (Cont?d):
(T
C
= +25
?
C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Dynamic Characteristics
Input Capacitance C
iss
V
DS
= 10V, f = 1MHz − 734 − pF
Output Capacitance C
oss
− 300 − pF
Reverse Transfer Capacitance C
rss
− 26 − pF
Turn−On Time t
on
V
DS
= 20V, I
D
= 5A − 120 − ns
Turn−Off Time t
off
− 60 − ns
.875 (22.2)
Dia Max
.665 (16.9)
.430
(10.92)
Seating
Plane
.312 (7.93) Min .040 (1.02)
.135 (3.45) Max
.350 (8.89)
Drain
Gate Source/Case
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
1.187 (30.16)
New Old Stock
NOTE:
ALL ELECTRONICS ARE UNTESTED
SOLD AS IS